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Both Ar + and N + were selected as the injecting ions. In this study, we tried to deposit films with the IBICVD method by injecting both ion beam and HMDS to a Si substrate. Nevertheless, film deposition experiments with the IBICVD method using HMDS have not been carried out yet. The HMDS molecule has a chemical structure which is similar to hexamethyldisilane and hexamethyldisiloxane. HMDS has also been shown to be available for the deposition of SiC and diamond-like carbon (DLC). For examples, HMDS is available for the preparation of various biological specimens for microscopy, chemical syntheses, and the formation of SiN and silicon carbonitride (SiCN) films. Meanwhile, hexamethyldisilazane has long been used in various scientific and technological studies. succeeded to deposit SiC films with the IBICVD method using methylsilane. also confirmed that silicon dioxide films could be deposited with the IBICVD method using hexamethyldisiloxane. They found that SiC films were formed on the substrates due to the dissociation of hexamethyldisilane by the Ar ion impact. In their experiments, Ar ion beams were injected to Si substrates in conjunction with the gas flow of hexamethyldisilane. used hexamethyldisilane as a source material of IBICVD experiments. Recently, the IBICVD method is found to be of use for the formation of SiC films. At present, the IBICVD method is attracting much attention for the fabrications of three-dimensional nanostructures and ferromagnetic materials. It is conceivable that the practical application of the IBICVD method to topics other than the oxide film formation would be important and significant subjects. Īn ion beam induced chemical vapor deposition (IBICVD) method has long been recognized to be useful for the preparation of various oxide films such as TiO 2, Al 2O 3, and ZrO 2. On the other hand, SiN films could be produced using silane and ammonia. In most cases, SiC films were produced with the chemical vapor deposition (CVD) method using silane and propane as source gas. Silicon carbide (SiC) recently receives wide-spread attention of its superior characteristics and is used as a semiconductor material, while silicon nitride (SiN) has been similarly interested in its practical applicability in surface passivation. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections. On the other hand, in the cases of N + ion beam irradiation, silicon nitride films involving small amount of carbon were formed. The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar + ions were injected in conjunction with HMDS. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS).
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After the experiments, films were found to be deposited on the substrates. Temperature of the Si substrate was set at 540 ☌.
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We selected Ar + and N + as the ion beam. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material.